Light Emitting Device and Manufacturing Method of the Same

ABSTRACT

The present invention is directed to a light emitting device structured so as to increase the amount of light which is taken out in a certain direction after emitted from a light emitting element, and a method of manufacturing this light emitting device. An upper end portion of an insulating material  19  that covers an end portion of a first electrode  18  is formed to have a curved surface having a radius of curvature, a second electrode  23   a  is formed to have a slant face as going from its center portion toward its end portion along the curved surface. Light emitted from a light emitting layer comprising an organic material  20  that is formed on the second electrode  23   a  is reflected at the slant face of the second electrode  23   a  to increase the total amount of light taken out in the direction indicated by the arrow in FIG.  1 A.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a light emitting device with a lightemitting element that emits fluorescent light or phosphorescent lightupon application of electric field to a pair of electrodes of theelement which sandwich a organic compound-containing layer (hereinafter,a light emitting layer comprising an organic material), and to a methodof manufacturing the light emitting device. In this specification, theterm light emitting device includes an image display device, a lightemitting device and a light source (including illuminating device).Also, the following modules are included in the definition of the lightemitting device: a module obtained by attaching to a light emittingdevice a connector such as an FPC (flexible printed circuit; terminalportion), a TAB (tape automated bonding) tape, or a TCP (tape carrierpackage); a module in which a printed wiring board is provided at an endof the TAB tape or the TCP; and a module in which an IC (integratedcircuit) is directly mounted to a light emitting element by the COG(chip on glass) system.

2. Description of the Related Art

Light emitting elements, which employ organic compounds as lightemitting member and are characterized by their thinness andlight-weight, fast response, and direct current low voltage driving, areexpected to develop into next-generation flat panel displays. Amongdisplay devices, ones having light emitting elements arranged to form amatrix shape are considered to be particularly superior to theconventional liquid crystal display devices for their wide viewing angleand excellent visibility.

It is said that light emitting elements emit light through the followingmechanism: a voltage is applied between a pair of electrodes thatsandwich a light emitting layer comprising an organic material,electrons injected from the cathode and holes injected from the anodeare re-combined at the luminescent center of the light emitting layercomprising the organic material to form molecular excitons, and themolecular excitons return to the base state while releasing energy tocause the light emitting element to emit light. Known as excitationstates are singlet excitation and triplet excitation, and it isconsidered that luminescence can be conducted through either one ofthose excitation states.

Such light emitting devices having light emitting elements arranged toform a matrix can employ passive matrix driving (simple matrix lightemitting devices), active matrix driving (active matrix light emittingdevices), or other driving methods. However, if the pixel density isincreased, active matrix light emitting devices in which each pixel (oreach dot) has a switch are considered as advantageous because they canbe driven with low voltage.

Organic compounds for forming a layer containing an organic compound(strictly speaking, light emitting layer), which is the main part of alight emitting element, are classified into low molecular weightmaterials and polymeric (polymer) materials. Both types of materials arebeing studied but polymeric materials are the ones that are attractingattention because they are easier to handle and have higher heatresistance than low molecular weight materials.

The conventional active matrix type light emitting device has thestructure comprising a light emitting element in which an electrodeelectrically connected with TFT on a substrate is formed as an anode, alight emitting layer comprising an organic material is formed thereon,and cathode is formed thereon. And light generated at the light emittinglayer comprising the organic material can be observed at the TFT sidethrough the anode that is a transparent electrode.

Therefore, manufactured in the present invention is an active matrixlight emitting device that has a light emitting element with a structurecalled a top emission structure. In the top emission structure, a TFTside electrode which is electrically connected to a TFT on a substrateserves as an anode, a light emitting layer comprising an organicmaterial is formed on the anode, and a cathode that is a transparentelectrode is formed on the light emitting layer comprising the organicmaterial. Or, an active matrix light emitting device that has a lightemitting element with the structure in which the first electrode servesas a cathode, a light emitting layer comprising an organic materialformed on the cathode, and an anode that is a transparent secondelectrode formed on the light emitting layer comprising the organicmaterial is formed.

Not all of light generated in the light emitting layer comprising theorganic material cannot be observed by observers through the transparentelectrode serving as the cathode. For example, light emitted in thelateral direction (the direction parallel to the substrate face) is nottaken out and therefore is a loss. An object of the present invention isto provide a light emitting device structured so as to increase theamount of light which is taken out in a certain direction after emittedfrom a light emitting element, as well as a method of manufacturing thislight emitting device.

SUMMARY OF THE INVENTION

A problem of the top emission structure is that its transparentelectrode has high film resistance. The film resistance becomes higherwhen the thickness of the transparent electrode is reduced. When thetransparent electrode that serves as an anode or a cathode is high infilm resistance, a voltage drop makes the intra-plane electric potentialdistribution uneven and the luminance becomes fluctuated among lightemitting elements. Another object of the present invention is thereforeto provide a light emitting device structured so as to lower the filmresistance of a transparent electrode in a light emitting element, aswell as a method of manufacturing the light emitting device. Stillanother object of the present invention is to provide an electricappliance that uses this light emitting device as its display unit.

In the present invention, the first electrode is formed, and insulatingmaterials (also referred to as a bank or a partition wall) that coveredges of the first electrode, and then, the second electrode is formedto contact with the curved surface of the insulating materials. A lightemitting layer comprising an organic material and a cathode are formedon a concave shaped second electrode. The second electrode functions asan anode and is for increasing the amount of light taken out in acertain direction (a direction in which light passes the cathode) byreflecting light emitted in the lateral direction.

Accordingly, the top layer of the second electrode having a slant ispreferably made from a metal that reflects light, for example, amaterial mainly containing aluminum or silver whereas the center portionthat is in contact with the light emitting layer comprising the organicmaterial is formed of an anode material having a large work function ora cathode material having a small work function.

Further, the present invention is for reducing the film resistance of atransparent electrode that serves as a cathode by means of formingwirings (auxiliary wirings) on the insulating materials provided betweeneach pixel electrode simultaneously with a formation of the secondelectrode. In addition, the present invention also has a characteristicof forming outgoing wirings using the auxiliary wirings to connect withanother wirings that are in a bottom layer.

A structure 1 of the invention that is related to a manufacturing methoddisclosed in this specification is that a light emitting devicepossessing plural light emitting elements each having, on a substratepossessing insulation surfaces,

-   -   a first electrode connected to a source region or a drain region        of a thin film transistor    -   an insulating material covering an end portion of the first        electrode,    -   a second electrode covering a side face or a part of the side        face of the insulating material and contacting with the first        electrode,    -   a organic compound-containing layer contacting with the second        electrode, and    -   a third electrode contacting with the layer.

Further, in the above structure, it is preferable that an auxiliaryelectrode is formed simultaneously with forming the second electrode inorder to reduce the resistance of an upper electrode (the thirdelectrode).

A structure 2 of the another invention is that a light emitting devicepossessing plural light emitting elements each having, on a substratepossessing insulation surfaces,

-   -   a first electrode connected to a source region or a drain region        of a thin film transistor,    -   an insulating material covering an end portion of the first        electrode,    -   a second electrode covering a side face or a part of the side        face of the insulating material and contacting with the first        electrode,    -   a organic compound-containing layer contacting with the second        electrode,    -   a third electrode contacting with the layer, and    -   an auxiliary electrode contacting with the third electrode on        the insulating material and becoming the same electric        potential,    -   wherein the auxiliary electrode is the same material as the        second electrode.

A light emitting device in the above each structure, wherein the firstelectrode is the same in its electric potential as the second electrode,and is an anode or a cathode.

A light emitting device in above each structure, wherein the secondelectrode is formed in a concave shape partially having a curved surfaceas going from its center portion toward its end portion, and reflects alight emitted from the light emitting layer comprising the organicmaterial.

A light emitting device in the above each structure, wherein the centerportion of the second electrode contacts with the first electrode, andthe insulating material exists between an end portion of the firstelectrode and an end portion of the second electrode.

A light emitting device in above each structure, wherein the thirdelectrode is a conductive film through which a light is transmitted.

The present invention gives an insulating material placed between pixels(called as a bank, a partition wall, a barrier or the like) a particularshape to avoid insufficient coverage when forming by application a highmolecular weight organic compound-containing layer. The above structuresare characterized in that an upper edge portion of the insulatingmaterial is curved to have the first radius of curvature, and a bottomedge portion of the insulating material is curved to have the secondradius of curvature. The first radius of curvature and the second radiusof curvature are 0.2 to 3 μm. The taper angle of the insulating materialis 35 to 55°.

By giving the edge the radius of curvature, the level difference is wellcovered and the light emitting layer comprising the organic material andother films formed on the insulating material can be made very thin.

The above structures are characterized in that the second electrode hasa slant face toward its center and that the angle of inclination (alsocalled as a taper angle) exceeds 30° and smaller than 70°, preferably,smaller than 60°. The angle of inclination, the material and thicknessof the light emitting layer comprising the organic material, and thematerial and thickness of the third electrode have to be set suitably toprevent light reflected by the slant of the second electrode fromscattering or straying between layers.

The above structures are characterized in that the second electrode is aconductive film transmissive of light, for example, a thin metal film, atransparent conductive film, or a laminated film having those films.

The stepped portion (the upper edge portion of the slant portion) of thesecond electrode is almost flush with a side face of the insulatingmaterial and, in order to cover the level difference well, it ispreferable for the slant face of the second electrode and the side faceof the insulating material to have the same angle of inclination.

The above structures are characterized in that the second electrode isan anode whereas the third electrode is a cathode. Alternatively, theabove structures are characterized in that the second electrode is acathode whereas the third electrode is an anode.

The light emitting device in each of the above structures ischaracterized in that the light emitting layer comprising the organicmaterial is formed of a material that emits white light and that thelayer is used in combination with color filters provided in a scalingmember. Alternatively, the light emitting device in each of the abovestructures is characterized in that the light emitting layer comprisingthe organic material is formed of a material that emits light of asingle color and that the layer is used in combination with colorconversion layers or colored layers provided in a scaling member.

A structure for realizing the above each structure 1 and 2 is that amethod of manufacturing a light emitting device possessing lightemitting elements each having an anode, a organic compound-containinglayer contacting with the anode, and a cathode contacting with the lightemitting layer comprising the organic material, having the steps of:

-   -   forming an insulating material covering an end portion of a        first electrode connected to a source region or a drain region        of a thin film transistor,    -   forming a second electrode contacting with a side face of the        insulating material and the first electrode, and an auxiliary        electrode onto the insulating material,    -   forming a organic compound-containing layer contacting with a        region of the second electrode contacting with the first        electrode and a slant face of the second electrode, and    -   forming onto the light emitting layer comprising the organic        material a third electrode comprising a metal thin film through        which a light is transmitted.

The above structure related to a manufacturing method is characterizedin that the second electrode is an anode and is formed of a metal layerthat is larger in work function than the third electrode. In addition,the above structure related to a manufacturing method is characterizedin that the second electrode is a laminate of a first metal layercontaining aluminum, a second metal layer containing titanium nitride ortungsten nitride. When titanium nitride or tungsten nitride is used foran anode, it is preferable to conduct ultraviolet ray irradiationtreatment to raise its work function.

The above structures are characterized in that the second electrode hasa slant portion toward its center and that the angle of inclinationexceeds 30° and smaller than 70°.

The above structure related to a manufacturing method is characterizedin that an upper edge portion of the insulating material for coveringthe edge portion of the first electrode is curved to have a radius ofcurvature and that the radius of curvature is 0.2 to 3 μm.

An EL element has a light emitting layer comprising an organic materialthat provides luminescence upon application of electric field (electroluminescence) (hereinafter, EL layer), in addition to an anode and acathode. Luminescence obtained from organic compounds is divided intolight emission upon return to the base state from singlet excitation(fluorescence) and light emission upon return to the base state fromtriplet excitation (phosphorescence). Both types of light emission canbe employed in a light emitting device manufactured in accordance with amanufacturing device and a film-forming method of the present invention.

A light emitting element having an EL layer (EL element) is structuredso as to sandwich the EL layer between a pair of electrodes. Usually,the EL layer has a laminate structure. A typical example of the laminatestructure is one consisting of a hole transporting layer, a lightemitting layer, and an electron transporting layer, which was proposedby Tang et al. of Kodak Eastman Company. This structure has very highlight emission efficiency and is employed in most of light emittingdevices that are currently under development.

Other examples of the laminate structure include one in which a holeinjection layer, a hole transporting layer, a light emitting layer, andan electron transporting layer are layered on an anode in this order,and one in which a hole injection layer, a hole transporting layer, alight emitting layer, an electron transporting layer, and an electroninjection layer are layered on an anode in this order. The lightemitting layer may be doped with a fluorescent pigment or the like.These layers may all be formed of low molecular weight materials or mayall be formed of high molecular weight materials. In this specification,all layers placed between an anode and a cathode together make an ELlayer. Accordingly, the above hole injection layer hole transportinglayer, light emitting layer, electron transporting layer, and electroninjection layer are included in the EL layer.

In a light emitting device of the present invention, how screen displayis driven is not particularly limited. For example, a dot-sequentialdriving method, a linear-sequential driving method, a plane-sequentialdriving method or the like can be employed. Typically, alinear-sequential driving method is employed and a time ratio gray scaledriving method or an area ratio gray scale driving method is chosensuitably. A video signal inputted to a source line of the light emittingdevice may be an analog signal or a digital signal, and driving circuitsand other circuits are designed in accordance with the type of the videosignal as appropriate.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIGS. 1A to 1C are diagrams showing Embodiment Mode 1;

FIGS. 2A and 2B are diagrams showing Embodiment 1;

FIGS. 3A and 3B are diagrams showing Embodiment 1;

FIGS. 4A to 4C are diagrams showing Embodiment Mode 3;

FIGS. 5A to 5C are diagrams showing Embodiment Mode 2;

FIGS. 6A and 6B are diagrams showing Embodiment 2;

FIG. 7 is a diagram showing Embodiment 2;

FIG. 8 is a diagram showing Embodiment 2;

FIGS. 9A and 9B are diagrams showing Embodiment 3;

FIGS. 10A to 10F are diagrams showing examples of electronic equipments;and

FIGS. 11A to 11C are diagrams showing examples of electronic equipments.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiment Modes of the present invention will be described below.

Embodiment Mode 1

FIG. 1A is a cross-sectional view of an active matrix light emittingdevice (a part of one pixel). Described here as an example is a lightemitting element which uses as its light emitting layer a light emittinglayer comprising an organic material formed of a high molecular weightmaterial that emits white light.

In FIG. 1A, a TFT (p-channel TFT) on a substrate 10 having an insulatingsurface is an element for controlling a current flowing into an EL layer(organic compound-containing layer) 20 that emits white light. Ofregions denoted by 13 and 14, one is a source region and the other is adrain region. A base insulating film 11 (here, a laminate of aninsulating nitride film as a lower layer and an insulating oxide film asan upper layer) is formed on the substrate 10. A gate insulating film 12is placed between a gate electrode 15 and an active layer of the TFT.

For a substrate 10 having an insulating surface, a glass substrate, aquartz substrate, and a plastic substrate may be chosen, as well as asemiconductor substrate for releasing heat of an EL element can be used.

Denoted by 16 a is an interlayer insulating film formed of a siliconnitride film or a silicon nitroxide film. Reference symbol 16 b isformed of a planarizing insulating film made from photosensitive ornonphotosensitive organic materials (polyimide, acryl, polyamide,polyimideamide, resist, or benzocyclobutene), a planarizing insulatingfilm (that includes coating silicon oxide film, PSG (glass dopedphosphorous), BPSG (glass doped boron and phosphorous)), or a laminatedfilm having these films.

Although not shown in the drawing, one pixel has another or more TFTs(n-channel TFTs or p-channel TFTs) other than this TFT. The TFT here hasone channel formation region. However, the number of channel formationregions is not particularly limited, and the TFT may have more than onechannels.

Reference symbol 18′ denotes layer of a first electrode that isconnected to a source region and a drain region of the TFT. Here,reference symbol 18 is a laminated film layered a titanium film, atitanium nitride film, a film mainly containing aluminum, and a titaniumnitride film in this order. A power supplying line 17 is formed to havethe same laminate structure. Since the above laminate structure includesa film mainly containing aluminum, a low-resistant wiring is obtainedand a source wiring 22 and others are formed at the same time.

Both end portions of the first electrode 18 and in-between areas arecovered with an insulating material 19 (also called as a barrier or abank). In the present invention, what sectional shape the insulatingmaterial 19 takes is important. If an upper edge portion of theinsulating material 19 is not curved, a film formation defect is likelyto occur and a convex portion is formed on the upper edge of theinsulating material 19. Therefore, the present invention make an upperedge portion of the insulating material 19 curved to have a radius ofcurvature. The radius of curvature is preferably 0.2 to 3 μm. Thepresent invention can give the light emitting layer comprising theorganic material and the metal film excellent coverage. The taper anglein the side face of the insulating material 19 may be 45°±10°.

Reference 23 a is a second electrode formed of a conductive film,namely, an anode (or a cathode) of OLED, and reference 21 is a thirdelectrode, namely, a cathode of OLED (or an anode).

Further, after the insulating material 19 that is curved to have aradius of curvature is formed, a second electrode 23 a an auxiliaryelectrode 23 b are formed. Depending on the curved surface of theinsulating material 19, the concave shape of the second electrode 23 ais obtained. The bottom surface of the second electrode 23 a may beleveled. The radius of curvature of the second electrode 23 a ispreferably 0.2 to 3 μm. The present invention can give the lightemitting layer comprising the organic material and the metal filmexcellent coverage. The taper angle in the slant of the second electrode23 a may be 45°±10° as well as that of the insulating material 19.

The present invention is characterized in that light emitted from thelight emitting layer comprising the organic material 20 is reflected atthe slant of the second electrode 23 a to increase the total amount oflight taken out in the direction indicated by the arrow in FIG. 1A.

Here, the second electrode 23 a is formed of a laminated film layered afilm mainly containing aluminum and a titanium nitride film in thisorder, and made top layer of 23 a that is in contact with a lightemitting layer comprising an organic material 20 function as an anode. Amaterial layer that reflects light generated at the light emitting layercomprising the organic material 20 is used for the second electrode 23a. Here, light emission is reflected by the film mainly containingaluminum by reducing the thickness of the titanium nitride film lessthan 100 nm. An auxiliary electrode 23 b is formed to have the samelaminate structure. In addition, the auxiliary electrode 23 b isprovided for reducing a resistance of a conductive film (cathode) 21,however, if the electrical resistance of the conductive film 21 issufficiently low, the auxiliary electrode 23 b is not necessary to beprovided.

To make the light emitting layer comprising the organic material 20 emitwhite light, an aqueous solution of poly(ethylenedioxythiophene)/poly(styrene sulfonic acid) (PEDOT/PSS) is applied tothe entire surface and baked to form a film that works as a holeinjection layer. Then, a polyvinyl carbazole (PVK) solution doped with aluminescence center pigment (such as 1,1,4,4-tetraphenyl-1,3-butadiene(TPB), 4-dicyanomethylene-2-methyl-6-(p-dimethylamino-styryl)-4H-pyran(DCM1), Nile red, or coumarin 6) is applied to the entire surface andbaked to form a film that works as a light emitting layer. The solventof PEDOT/PSS is water and PEDOT/PSS is not dissolved in an organicsolvent. Accordingly, the hole injection layer does not go back to themelted state when PVK is applied thereon. Since PEDOT/PSS and PVK havedifferent solvents, they are preferably formed into films in differentfilm forming chambers. The light emitting layer comprising the organicmaterial 20 may instead be a single layer. In this case, a1,3,4-oxadiazole derivative (PBD) capable of transporting electrons isdispersed in polyvinyl carbazole (PVK) capable of transporting holes.Another method to obtain white light emission is to disperse 30 wt % ofPBD as an electron transporting agent and disperse four kinds ofpigments (IPB, coumarin 6, DCM1, and Nile red) in appropriate amounts.

Alternatively, a combination of films is chosen appropriately from aorganic compound-containing layer that emits red light, a organiccompound-containing layer that emits green light, and a organiccompound-containing layer that emits blue light to overlap each otherand mix their colors, thereby obtaining white light emission.

Further, an example of white light emission is shown here, however, itis not limited thereof. An organic compound-containing film that emitsred emission, an organic compound-containing film that emits blueemission, and an organic compound-containing film that emits greenemission may be properly and selectively formed for each pixel torealize full color display.

FIG. 1B is a view showing an enlarged frame format of a vicinity of aninterface between the light emitting layer comprising the organicmaterial 20 and the conductive film (third electrode) 21. Here, alaminated layer of a cathode buffer layer 21 c and a conductive film 21a is referred to as a cathode. For the cathode buffer layer 21 c, asmall work function thin film, for example, a LIF or a CaF₂ is formed byevaporation to have a thickness of 1 to 10 nm, and a film mainlycontaining aluminum (Al film, AlLi film, AlMg film, or the like) isformed by sputtering or evaporation to have a thickness of about 10 nmto have function as the cathode. The material and thickness of thecathode have to be chosen suitably to transmit light from the lightemitting layer comprising the organic material 20. In thisspecification, the term cathode includes not only a single layer of amaterial having a small work function but also a laminate of a thin filmof a small work function material and a conductive film.

Using a film mainly containing aluminum (Al film) as the conductive film(third electrode) 21 means that a material that is not an oxide comesinto contact with the light emitting layer comprising the organicmaterial 20. As a result, the reliability of the light emitting deviceis improved. Instead of an Al film, a transparent conductive film (suchas an ITO (indium oxide-tin oxide alloy) film, an In₂O₃—ZnO (indiumoxide-zing oxide alloy) film, or a ZnO (zinc oxide) film) may beemployed as the conductive film (third electrode) 21. The conductivefilm (third electrode) 21 may be a laminated film of a thin metal layer(typically a film of such alloy as MgAg, MgIn, or AlLi) and atransparent conductive film.

When a film mainly containing aluminum (Al film) is used as theconductive film (third electrode) 21, especially when a protective filmcontaining oxygen (not shown) is formed thereon, an oxide film 21 b islikely formed on the surface as shown in FIG. 1B, the oxide film 21 bcan improve the transmittancy of whole conductive film 21 as well asblock the penetration of water and oxygen thereinto that causesdeterioration. If a microfracture (also referred to as a pinhole) isformed on the conductive film 21 for some sort of causes, volume of theoxide film 21 b increases and it can fill up the hole by reacting withoxygen as shown in FIG. 1C, further, it can block the penetration ofmoisture and oxygen into an EL layer.

Although not shown in the drawing, a protective film is preferablyformed on the conductive film (third electrode) 21 in order to enhancethe reliability of the light emitting device. This protective film is aninsulating film which mainly contains silicon nitride or siliconnitroxide and which is formed by sputtering (the DC method or the RFmethod), or a thin film mainly containing carbon. A silicon nitride filmcan be formed in an atmosphere containing nitrogen and argon using asilicon target. A silicon nitride target may be employed instead. Theprotective film may also be formed by film forming apparatus that usesremote plasma. The protective film is made as thin as possible to allowemitted light to pass through the protective film. In the case that thefilm mainly containing aluminum is used as the conductive film 21, evenif an insulating film containing oxygen is used as a protective film,the penetration of water and oxygen into an EL layer can be blocked.

The present invention is characterized in that the thin film mainlycontaining carbon is a DLC (diamond-like carbon) film with a thicknessof 3 to 50 nm. In viewpoint of short-range order, a DLC film has SP³bonds as bonds between carbons. Macroscopically, a DLC film has anamorphous structure. 70 to 95 atomic % carbon and 5 to 30 atomic %hydrogen constitute a DLC film, giving the film high degree of hardnessand excellent insulating ability. Such DLC film is characteristicallylow in transmittance of gas such as steam and oxygen. Also, it is knownthat the hardness of a DLC film is 15 to 25 GPa according to measurementby a microhardness tester.

A DLC film is formed by plasma CVD (typically, RF plasma CVD, microwaveCVD, or electron cyclotron resonance (ECR) CVD) or sputtering. Any ofthe film formation methods can provide a DLC film with excellentadhesion. In forming a DLC film, the substrate is set as a cathode.Alternatively, a dense and hard DLC film is formed by applying negativebias and utilizing ion bombardment to a certain degree.

Reaction gases used to form the film are hydrogen gas and hydrocarbon-based gas (for example, CH₄, C₂H₂, or C₆H₆) and are ionized byglow discharge. The ions are accelerated to collide against the cathodeto which negative self-bias is applied. In this way, a dense, flat, andsmooth DLC film is obtained. The DLC film is an insulating filmtransparent or translucent to visible light.

In this specification, being transparent to visible light means having avisible light transmittance of 80 to 100% whereas being translucent tovisible light means having a visible light transmittance of 50 to 80%.

The description given here takes a top gate TFT as an example. However,the present invention is applicable to any TFT structure. For instance,the invention can be applied to a bottom gate (reverse stagger) TFT anda forward stagger TFT.

Embodiment Mode 2

A method of combining a white color luminescent element and a colorfilter (hereinafter, referred to as color filter method) will beexplained in reference to FIG. 5A as follows.

The color filter method is a system of forming a light emitting elementhaving a light emitting layer comprising an organic material displayingwhite color luminescence and passing the provided white colorluminescence through a color filter to thereby achieve luminescence ofred, green, and blue.

Although there are various methods of achieving white colorluminescence, a case of using a luminescent layer comprising a highmolecular material formable by application will be explained here. Inthis case, doping of a color pigment to the high molecular material forconstituting a luminescent layer can be carried out by preparing asolution and can extremely easily be achieved in comparison with a vapordeposition method for carrying out common vapor deposition for doping aplurality of color pigments.

Specifically, after coating and baking an aqueous solution of poly(ethylenedioxythiophene)/poly (stylenesulfonic acid) (PEDOT/PSS)operated as a hole injecting layer over an entire face of an anodecomprising a metal having large work function (Pt, Cr, W, Ni, Zn, Sn,In), thereafter coating and baking a polyvinyl carbazole (PVK) solutiondoped with a luminescent core pigment (1,1,4,4-tetraphenyl1,3-butadience (TPB),4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM1),Nile red, coumarin 6 or the like) operating as the luminescent layerover the entire face, a cathode comprising a laminated layer of a thinfilm including metal having small work function (Li, Mg, Cs) and atransparent conductive film (ITO (indium oxide tin oxide alloy), indiumoxide zinc oxide alloy (In₂O₃—ZnO), zinc oxide (ZnO) or the like)laminated thereabove is formed. Further, PEDOT/PSS uses water as asolvent and is not dissolved in an organic solvent. Therefore, even whenPVK is coated thereabove, there is no concern of dissolving again.Further, kinds of solvents of PEDOT/PSS and PVK differ from each otherand therefore, it is preferable that the same film forming chamber isnot used therefor.

Further, although an example of laminating organic compound-containinglayers is shown in the above-described example, a single layer of alight emitting layer comprising an organic material can be constituted.For example, 1,3,4-oxadiazole derivative (PBD) having electrontransporting performance may be dispersed in polyvinyl carbazole (PVK)having hole transporting performance. Further, white color luminescenceis achieved by dispersing 30 wt % of PBD as an electron transportingagent and dispersing pertinent amounts of four kinds of color pigments(TPB, coumarin 6, DCM1, Nile red).

Further, the light emitting layer comprising the organic material isformed between the anode and the cathode and by recombining holesinjected from the anode and electrons injected from the cathode at thelight emitting layer comprising the organic material, white colorluminescence is achieved in the light emitting layer comprising theorganic material.

Further, it is also possible to achieve white color luminescence as awhole by pertinently selecting a light emitting layer comprising anorganic material for carrying out red color luminescence; a lightemitting layer comprising an organic material for carrying out greencolor luminescence, and a light emitting layer comprising an organicmaterial for carrying out blue color luminescence, and laminating thefilms to mix color.

The light emitting layer comprising the organic material formed asdescribed above can achieve white color luminescence as a whole.

By forming color filters respectively provided with the coloring layer(R) for absorbing other than red color luminescence, a coloring layer(G) for absorbing other than green color luminescence, and the coloringlayer (B) for absorbing other than blue color luminescence in adirection of carrying out white color luminescence by the light emittinglayer comprising the organic material, white color luminescence from thelight emitting element can respectively be separated to achieve redcolor luminescence, green color luminescence, and blue colorluminescence. Further, in the case of an active matrix type, a structurein which TFT is formed between the substrate and the color filter isconstituted.

Further, starting from simplest stripe pattern, skewed mosaic alignment,triangular mosaic alignment, RGBG four pixels alignment or RGBW fourpixels alignment can be used for the coloring layer (R, G, B).

A coloring layer for constituting a color filter is formed by using acolor resist comprising an organic photosensitive material dispersedwith a pigment. Further chromaticity coordinates of white colorluminescence are (x, y)=(0.34, 0.35). It is known that color reproducingperformance as full color is sufficiently ensured.

Further in this case, even when achieved luminescent color differs, theconstitution is formed with all the light emitting layer comprising theorganic materials displaying white color luminescence and therefore, itis not necessary to form the light emitting layer comprising the organicmaterial to coat to divide for each luminescent color. Further, apolarizer for a circularly polarized light for preventing mirrorreflection is not particularly needed.

Next, a CCM (color changing mediums) method realized by combining a bluecolor light emitting element having a blue color luminescent organiccompound-containing layer and a fluorescent color changing layer will beexplained in reference to FIG. 5B.

According to the CCM method, the fluorescent color changing layer isexcited by blue color luminescence emitted from the blue colorluminescent element and color is changed by each color changing layer.Specifically, changing from blue color to red color by the colorchanging layer (B→R), changing from blue color to green color by thecolor changing layer (B→G) and changing from blue color to blue color bythe color changing layer (B→B) (further, changing from blue color toblue color may not be carried out) are carried out to achieve red color,green color and blue color luminescence. Also in the case of the CCMmethod, the structure in which TFT is formed between the substrate andthe color changing layer is constituted in the case of the active matrixtype.

Further, also in this case, it is not necessary to form the lightemitting layer comprising the organic materials to coat to divide alsoin this case. Further, a polarizer for a circularly polarized light forpreventing mirror reflection is not particularly needed.

Further, when the CCM method is used, since the color changing layer isflorescent, the color changing layer is excited by external light and aproblem of reducing contrast is posed and therefore, as shown by FIG.5C, the contrast may be made conspicuous by mounting color filters.

Further, this embodiment mode can be combined with Embodiment Mode 1.

Embodiment Mode 3

Here, a total of an EL module and arrangement of a drying agent will beexplained in reference to FIGS. 4A and 4B. FIG. 4A is a top surface viewof the EL module. FIG. 4B is a part of a cross-sectional view.

A substrate provided with numerous TFTs (also referred to as TFTsubstrate) is provided with a pixel portion 40 for display, drivercircuits 41 a and 41 b for driving respective pixels of the pixelportion, a connecting portion for connecting the electrode provided overthe EL layer and an extended wiring, a terminal portion 42 for pastingFPC for connecting to outside circuit and a drying agent 44. Further, inFIG. 4A and FIG. 4B, the drying agent 44 may be arranged to overlap aportion of the driver circuits, however, the drying agent can also bearranged such that a total of the driver circuits is concealed by thedrying agent 44 as shown in FIG. 4C. Further, the constitution ishermetically scaled by the substrate for sealing the EL element and aseal member 49. Further, FIG. 4B is a cross-sectional view of FIG. 4Ataken along a dotted line A-A′.

Pixels are numerously arranged regularly at the pixel portion 40 andarranged in an order of R, G, B in X direction although not illustratedhere.

Further, as shown by FIG. 4B, the seal substrate 48 is pasted by theseal member 49 to maintain an interval of about 2 to 30 μm and all ofthe light emitting elements are hermetically sealed. A recessed portionis formed at the seal substrate 48 by sand blast method or the like andthe recessed portion is arranged with the drying agent. Further, theseal member 49 is preferably constituted by a narrow frame formation tooverlap a portion of the driver circuits. Degassing is preferablycarried out by carrying out annealing in vacuum immediately beforepasting the seal substrate 48 by the seal member 49. Further, when theseal substrate 48 is pasted, the pasting is preferably carried out underan atmosphere including an inert gas (rare gas or nitrogen).

Further, this embodiment mode can freely be combined with EmbodimentMode 1 or Embodiment Mode 2.

The present invention is described in more detail with the followingEmbodiments.

Embodiment 1

In this embodiment, a brief description is given with reference to FIGS.2A to 3B on an example of procedure of forming a light emitting elementin accordance with the present invention.

First, a base insulating film 31 is formed on a substrate 30 which hasan insulating surface. The base insulating film 31 is a laminate and thefirst layer is a silicon oxynitride film formed to have a thickness of10 to 200 nm (preferably 50 to 100 nm) by plasma CVD using as reactiongas SiH₄, NH₃, and N₂O. Here, a silicon oxynitride film (compositionratio: Si=32%, O=27%, N=24%, H=17%) with a thickness of 50 nm is formed.The second layer of the base insulating film is a silicon oxynitridefilm formed to have a thickness of 50 to 200 nm (preferably 100 to 150nm) by plasma CVD using as reaction gas SiH₄ and N₂O. Here, a siliconoxynitride film (composition ratio: Si=32%, O=59%, N=7%, H=2%) with athickness of 100 nm is formed. Although the base insulating film 31 inthis embodiment has a two-layer structure, a single layer or a laminateof more than two layers of the above insulating films may be employedinstead.

Next, a semiconductor layer is formed on the base film. Thesemiconductor layer to serve as an active layer of the TFT is obtainedby forming a semiconductor film that has an amorphous structure througha known method (sputtering, LPCVD, plasma CVD, or the like), subjectingthe film to known crystallization treatment (laser crystallization,thermal crystallization, thermal crystallization using nickel or othercatalysts, or the like), and then pattering the obtained crystallinesemiconductor film into a desired shape. The thickness of thesemiconductor layer is 25 to 80 nm (preferably 30 to 60 nm). Thematerial of the crystalline semiconductor film is not limited butpreferably is silicon, a silicon germanium alloy, or the like.

When laser crystallization is employed to form the crystallinesemiconductor film, a pulse oscillation type or continuous wave excimerlayer, YAG layer, or YVO₄ laser is used. Laser light emitted from one ofsuch laser oscillators is collected by an optical system into a linearshape before irradiating the semiconductor film. Crystallizationconditions are chosen to suit individual cases. However, when an excimerlayer is employed, the pulse oscillation frequency is 30 Hz and thelaser energy density is 100 to 400 mJ/cm² (typically 200 to 300 mJ/cm²).When a YAG laser is employed, the second harmonic thereof is used, thepulse oscillation frequency is 1 to 10 kHz, and the laser energy densityis 300 to 600 mJ/cm² (typically 350 to 500 mJ/cm²). The laser light iscollected to have a width of 100 to 1000 μm, for example, 400 μm, into alinear shape and the entire surface of the substrate is irradiated withthis linear laser light setting the laser light overlap ratio to 80 to98%.

Next, the surface of the semiconductor layer is washed with an etchantcontaining hydrofluoric acid to form a gate insulating film that coversthe semiconductor layer. The gate insulating film is an insulating filmcontaining silicon and is formed by plasma CVD or sputtering to have athickness of 40 to 150 nm. In this embodiment, a silicon oxynitride film(composition ratio: Si=32%, O=59%, N=7%, H=2%) is formed by plasma CVDto have a thickness of 115 nm. The gate insulating film is not limitedto the silicon oxynitride film, of course, but may be a single layer orlaminate of other insulating films that contain silicon.

The surface of the gate insulating film is washed and then a gateelectrode is formed.

Next, the semiconductor layer is appropriately doped with an impurityelement that imparts a semiconductor the p-type conductivity, here,boron (B), to form a source 25′ region and a drain region 32. After thedoping, the semiconductor layer is subjected to heat treatment,irradiation of intense light, or laser light irradiation in order toactivate the impurity element. At the same time the impurity element isactivated, plasma damage to the gate insulating film and plasma damageto the interface between the gate insulating film and the semiconductorlayer are repaired. It is particularly effective to activate theimpurity element by irradiating the substrate from the front or backwith the second harmonic of a YAG laser at room temperature to 300° C. AYAG laser is a preferable activation measure because it requires littlemaintenance.

An interlayer insulating film 33 from a silicon nitride film and siliconnitroxide film is formed by PCVD method. Then, an interlayer insulatingfilm 35 is formed using a planarizing insulating film made fromphotosensitive or nonphotosensitive organic materials formed byapplication (polyimide, acryl, polyamide, polyimideamide, resist, orbenzocyclobutene), or a planarizing insulating film made from inorganicmaterials (an applied silicon oxide film), PSG (phosphorus-doped glass),BPSG (glass doped with boron and phosphorus), or the like), or laminatedfilm having these films.

After hydrogenation is conducted, contact holes reaching the sourceregion or drain region are formed. Then, a source electrode (wiring) anda first electrode (drain electrode) are formed to complete the TFT(p-channel TFT).

Although the description in this embodiment uses a p-channel TFT, ann-channel TFT can be formed if an n-type impurity element (such as P orAs) is used instead of a p-type impurity element.

The description given in this embodiment takes a top gate TFT as anexample. However, the present invention is applicable to any TFTstructure. For instance, the invention can be applied to a bottom gate(reverse stagger) TFT and a forward stagger TFT.

Formed through the above steps are the TFT (only the drain region 32 isshown in the drawing), the interlayer insulating films 33, 35, and thefirst electrodes 36 a to 36 d (FIG. 3A).

The first electrodes 36 a to 36 d in this embodiment are each a filmmainly containing an element selected from the group consisting of Ti,TiN, TiSi_(X)N_(Y), Al, Ag, Ni, W, WSi_(X), WN_(X), WSi_(X)N_(Y), Ta,TaN_(X), TaSi_(X)N_(Y), NbN, Mo, Cr, Pt, Zn, Sn, In, and Mo, or a filmmainly containing an alloy or compound material of the above elements,or a laminate of these films. The total thickness of the firstelectrodes 36 a to 36 d is set between 100 nm and 800 nm.

Particularly, the first electrode 36 a that comes into contact with thedrain region 32 is preferably formed of a material that can form anohmic contact with silicon, typically titanium, and is given a thicknessof 10 to 100 nm. For the first electrode 36 c, a metal materialreflective of light, typically, a metal material mainly containing Al orAg, is preferred, and the thickness of the layer is 100 to 600 nm. Thefirst electrode 36 b also functions as a blocking layer for preventingthe first electrode 36 c and 36 a from forming an alloy. For the firstelectrode 36 d, a material capable of preventing oxidation and corrosionof the first electrode 36 c and avoiding hillock or the like ispreferred (typically a metal nitride such as TiN or WN), and thethickness of the layer is 20 to 100 nm.

The first electrode 36 a to 36 d can be formed at the same time otherwirings, for example, a source wiring 34 and a power supplying line, areformed.

Next, the insulating material (called as a bank, a partition wall, abarrier, or the like) is formed to cover the edge of the first electrode(and a portion that is in contact with the drain region 32) (FIG. 3B).The insulating material is a film or a laminate of inorganic materials(such as silicon oxide, silicon nitride, and silicon oxynitride) andphotosensitive or non-photosensitive organic materials (such aspolyimide, acrylic, polyamide, polyimideamide, resist, andbenzocyclobutene). Photosensitive organic resin is used in thisembodiment. If positive photosensitive acrylic is used as a material ofthe insulating material, for example, it is preferable to curve only anupper edge portion of the insulating material to give a radius ofcurvature. Preferably, the final radius of curvature of the upper edgeportion of the insulating material is 0.2 to 3 μm. A negativephotosensitive material which becomes insoluble in an etchant underlight and a positive photosensitive material which becomes soluble in anetchant under light both can be used for the insulating material.

The second electrodes 36 e, 36 f are formed. As shown in FIG. 3B, thesecond electrode is formed so as the center portion thereof to contactwith the first electrode, the edge portion thereof to be on theinsulating material 37, or side surface of the insulating material. Thesecond electrodes 36 e, 36 f are slanted along with the side surface ofthe insulating material 37. The second electrode is slanted toward itscenter and that the angle of inclination (also called as a taper angle)of the slant is more than 30° and less than 70°. The second electrode 36e, 36 f reflects light generated from a light emitting layer comprisingan organic material that will be formed afterward.

The second electrodes 36 e, 36 f in this embodiment are each a filmmainly containing an element selected from the group consisting of Ti,TIN, TISi_(X)N_(Y), Al, Ag, Ni, W, WSi_(X), WN_(X), WSi_(X)N_(Y), Ta,TaN_(X), TaSi_(X)N_(Y), NbN, Mo, Cr, Pt, Zn, Sn, In, and Mo, or a filmmainly containing an alloy or compound material of the above elements,or a laminate of these films. The total thickness of the secondelectrodes 36 e, 36 f is set between 100 nm and 800 nm. The secondelectrodes 36 e, 36 f in this embodiment are formed by a laminated layerhaving high reflectance material film (Al film) 36 e and a large workfunction metal thin film (TIN film) 36 f but it is not limited thereof.The electrode can be a single layer or a laminated layer having three ormore layers.

In addition, in order to reduce the resistance of a third electrode thatwill be formed afterwards, an auxiliary electrode may be formed on theinsulating material at the same time of the formation of the secondelectrode.

Next, a light emitting layer comprising an organic material (EL layer)38 is formed by evaporation or application. When evaporation is chosen,for example, a film forming chamber is vacuum-exhausted until the degreeof vacuum reaches 5×10⁻³ Torr (0.665 Pa) or less, preferably 10⁻⁴ to10⁻⁶ Pa, for evaporation. Prior to evaporation, the organic compound isvaporized by resistance heating. The vaporized organic compound fliesout to the substrate as the shutter is opened for evaporation. Thevaporized organic compound flies upward and then deposits on thesubstrate through an opening formed in a metal mask. The light emittinglayer comprising the organic materials are formed by evaporation so thatthe light emitting element as a whole emits white light.

For instance, an Alq₃ film, an Alq₃ film partially doped with Nile redwhich is a red light emitting pigment, an Alq₃ film, a p-EtTAZ film, anda TPD (aromatic diamine) film are layered in this order to obtain whitelight.

On the other hand, when the light emitting layer comprising the organicmaterial is formed by application using spin coating, the layer afterapplication is preferably baked by vacuum heating. For example, anaqueous solution of poly (ethylene dioxythiophene)/poly (styrenesulfonic acid) (PEDOT/PSS) is applied to the entire surface and baked toform a film that works as a hole injection layer. Then, a polyvinylcarbazole (PVK) solution doped with a luminescence center pigment (suchas 1,1,4,4-tetraphenyl-1,3-butadiene (TPB),4-dicyanomethylene-2-methyl-6-(p-dimethylamino-styryl)-4H-pyran (DCM1),Nile red, or coumarin 6) is applied to the surface and baked.

Although the light emitting layer comprising the organic material is alaminate in the above example, a single-layer film may be used as thelight emitting layer comprising the organic material. For instance, a1,3,4-oxadiazole derivative (PBD) capable of transporting electrons isdispersed in polyvinyl carbazole (PVK) capable of transporting holes.Another method to obtain white light emission is to disperse 30 wt % ofPBD as an electron transporting agent and disperse four kinds ofpigments (TPB, coumarin 6, DCM1, and Nile red) in appropriate amounts.Also, the light emitting layer comprising the organic material may be alaminate of layers of high molecular weight material and layers of lowmolecular weight materials.

The next step is to form a thin film containing a metal of smallfunction (a film of an alloy such as MgAg, MgIn, AlMg, LiF, AlLi, CaF₂,or CaN, or a film formed by co-evaporation of an element belonging toGroup 1 or 2 in the periodic table and aluminum) and to form a thinconductive film (an aluminum film here) 39 thereon by evaporation (FIG.2B). An aluminum film is highly capable of blocking moisture and oxygenand therefore is a preferable material of the conductive film 39 forimprovement of the reliability of the light emitting device. FIG. 2B isa cross-sectional view taken along the dot-dash line A-A′ in FIG. 2A.This laminate is thin enough to let emitted light pass and functions asthe cathode in this embodiment. The thin conductive film may be replacedby a transparent conductive film (such as an ITO (indium oxide-tin oxidealloy) film, an In₂O₃—ZnO (indium oxide-zing oxide alloy) film, or a ZnO(zinc oxide) film). On the conductive film 39, an auxiliary electrodemay be formed in order to lower the resistance of the cathode. Thecathode is formed selectively by resistance heating through evaporationusing an evaporation mask.

The thus obtained light emitting element emits white light in thedirection indicated by the arrow in FIG. 2B. Light emitted in thelateral direction is reflected by the slant in the second electrodes 36f, 36 e, thereby increasing the amount of light emitted in the arrowdirection.

After the manufacturing process is thus finished up through formation ofthe second electrode (conductive film 39), the light emitting elementformed on the substrate 30 is scaled by bonding a scaling substrate(transparent substrate) using a seal agent. Spacers formed of a resinfilm may be provided in order to keep the gap between the scalingsubstrate and the light emitting element. The space surrounded by theseal agent is filled with nitrogen or other inert gas. For the sealagent, an epoxy-based resin is preferred. Desirably, the material of theseal agent transmits as little moisture and oxygen as possible. Asubstance having an effect of absorbing oxygen and moisture (e.g.,drying agent) may be placed in the space surrounded by the seal agent.

By enclosing the light emitting element in a space as above, the lightemitting element can be completely cut off from the outside and externalsubstances that accelerate degradation of the light emitting layercomprising the organic material, such as moisture and oxygen, can beprevented from penetrating into the light emitting element. Accordingly,a highly reliable light emitting device is obtained.

Embodiment 2

This embodiment describes with reference to FIGS. 6A to 8 an example ofa light emitting device in which an auxiliary electrode is formed.

FIG. 6A is a top view of a pixel, FIG. 6B is and a cross-sectional viewtaken along the dot-dash line A-A′.

In this embodiment, steps up through formation of an insulating material67 are identical with those in Embodiment 1 and descriptions thereof areomitted here. The insulating material 37 in FIG. 2B corresponds to theinsulating material 67 in FIG. 6B.

Following the descriptions in Embodiment 1, a base insulating film, adrain region 62, interlayer insulating films 63, 65, first electrode 66a to 66 d, and the insulating material 67 are formed on a substratehaving an insulating surface.

Next, the second electrodes 66 e, 66 f having curved portion are formed,and a light emitting layer comprising an organic material (EL layer) 68is selectively formed. This embodiment employs evaporation using anevaporation mask or ink jet to selectively form the light emitting layercomprising the organic material 68.

Then, an auxiliary electrode 60 is selectively formed on the insulatingmaterial 67 by evaporation using an evaporation mask. In the examplegiven in this embodiment, the auxiliary electrode 60 is placed in thedirection Y as shown in FIG. 6A. However, arrangement of the auxiliaryelectrode is not particularly limited and, as shown in FIG. 7, anauxiliary electrode 70 placed in the direction X may be employed. Across-sectional view taken along the dot-dash line A-A′ in FIG. 7 isidentical with FIG. 2B.

FIG. 8 is an exterior diagram of the panel shown in FIG. 7. Theauxiliary electrode (auxiliary wiring) 70 is led out as shown in FIG. 8and comes into contact with a lead-out wiring 87 in a region between apixel portion 82 and a source side driving circuit 83. In FIG. 8,reference symbol 82 denotes the pixel portion, 83, the source sidedriving circuit, 84 and 85, gate side driving circuits, and 86, a powersupplying line. The wirings that are formed at the same time the firstelectrode is formed are the power supplying line 86, the lead-out wiring87, and a source wiring. In FIG. 8, a terminal electrode for connectingwith an FPC is formed at the same time a gate wiring is formed.

Similarly to Embodiment 1, the next step is to form a thin filmcontaining a metal of small function (a film of an alloy such as MgAg,MgIn, AlLi, CaF₂, or CaN, or a film formed by co-evaporation of anelement belonging to Group 1 or 2 in the periodic table and aluminum)and to form a thin conductive film (an aluminum film here) 69 thereon byevaporation. This laminate is thin enough to let emitted light pass andfunctions as the cathode in this embodiment. The thin conductive filmmay be replaced by a transparent conductive film (such as an ITO (indiumoxide-tin oxide alloy) film, an In₂O₃—ZnO (indium oxide-zing oxidealloy) film, or a ZnO (zinc oxide) film). In this embodiment, theauxiliary electrode 60 is formed on the insulating material 67 such thatthe auxiliary electrode 60 comes into contact with the conductive film69 in order to lower the resistance of the cathode.

The thus obtained light emitting element emits white light in thedirection indicated by the arrow in FIG. 6B. Light emitted in thelateral direction is reflected by the slant in the second electrodes 66e, 66 f; thereby increasing the amount of light emitted in the arrowdirection.

This embodiment is also applicable to a light emitting device having alarge-sized pixel portion since the resistance of the cathode is loweredby forming the auxiliary electrode 60 or 70.

This embodiment can be combined freely with any one of Embodiment Modes1 to 3 and Embodiment 1.

Embodiment 3

Further, an exterior view of an active matrix type light emittingapparatus is described with reference to FIGS. 9A and 9B. FIG. 9A is atop view showing the light emitting apparatus and FIG. 9B is across-sectional view of FIG. 9A taken along a line A-A′. Referencenumeral 901 indicated by a dotted line designates a source signal linedriver circuit, numeral 902 designates a pixel portion, and numeral 903designates a gate signal line driver circuit. Further, numeral 904designates a seal substrate, numeral 905 designates a seal agent and aninner side surrounded by the seal agent 905 constitutes a space 907.Reference numerals 930 a, 930 b are IC chips having a memory, a CPU, aD/A converter, or the like and mounted on a substrate 910 by COG (chipon glass) method, wire bonding method, or TAB (tape automated bonding)method.

Further, reference numeral 908 designates a wiring for transmittingsignals inputted to the source signal line driver circuit 901 and thegate signal line driver circuit 903 for receiving a video signal or aclock signal from FPC (flexible printed circuit) 909 for constituting anexternal input terminal. Further, although only FPC is illustrated here,the FPC may be attached with a printed wiring board (PWB). The lightemitting apparatus in the specification includes not only a main body ofthe light emitting apparatus but also a state in which FPC or PWB isattached thereto.

Next, a sectional structure will be explained in reference to FIG. 9B.Driver circuits and the pixel portion are formed over a substrate 910and here, the source signal line driver circuit 901 as the drivercircuit and the pixel portion 902 are shown.

Further, the source signal line driver circuit 901 is formed with a CMOScircuit combined with an n-channel type TFT 923 and a p-channel type TFT924. Further, TFT for forming the driver circuit may be formed by apublicly known CMOS circuit, PMOS circuit or NMOS circuit. Further,although according to the embodiment, a driver integrated type formedwith the driver circuits over the substrate is shown, the driverintegrated type is not necessarily be needed and the driver circuits canbe formed not over the substrate but at outside thereof.

Further, the pixel portion 902 is formed by a plurality of pixels eachincluding a switching TFT 911, and a first electrode (anode) 913electrically connected to the current control TFT 912 and a drainthereof.

Further, an insulating layer 914 is formed at both ends of the firstelectrode 913, a portion of the first electrode forms a slant along aside of the insulating layer 914. Light generated at a layer containingorganic compound 915 is reflected by the slant in order to increase anamount of luminescence in the direction indicated by an arrow in FIG.9B. 25. A light emitting layer comprising an organic material 915 isselectively formed on the second electrode (anode) 919. Further, a thirdelectrode (cathode) 916 is formed over the light emitting layercomprising the organic material 915. Thereby, a light emitting element918 comprising the second electrode (anode) 919, the light emittinglayer comprising the organic material 915 and the third electrode(cathode) 916 is formed. Here, the light emitting element 918 shows anexample of white color luminescence and therefore, provided with thecolor filter comprising a coloring layer 931 and a light shielding 932(for simplification, overcoat layer is not illustrated here).

An auxiliary electrode 917 which is a part of a structure shown inEmbodiment 2 is formed on the insulating layer 914 to realize that thethird electrode has a lower resistance. The second electrode (cathode)916 functions also as a wiring common to all the pixels and electricallyconnected to FPC 909 via the auxiliary electrode 917 and the connectionwiring 908.

Further, in order to seal the light emitting element 918 formed over thesubstrate 910, the seal substrate 904 is pasted by the seal agent 905.Further, a spacer comprising a resin film may be provided for ensuringan interval between the seal substrate 904 and the light emittingelement 918. Further, the space 907 on the inner side of the seal agent905 is filled with an inert gas of nitrogen or the like. Further, it ispreferable to use epoxy species resin for the seal agent 905. Further itis preferable that the seal agent 905 is a material for permeatingmoisture or oxygen as less as possible. Further, the inner portion ofthe space 907 may be included with the substance having an effect ofabsorbing oxygen of water.

According to this embodiment, as a material for constituting the sealsubstrate 904, other than glass substrate or quartz substrate, a plasticsubstrate comprising FRP (Fiberglass-Reinforced Plastics), PVF(polyvinyl fluoride), Mylar, polyester or acrylic resin can be used.Further, it is possible to adhere the seal substrate 904 by using theseal agent 905 and thereafter seal to cover a side face (exposed face)by a seal agent.

By sealing the light emitting element in the space 907 as describedabove, the light emitting element can completely be blocked from outsideand a substance for expediting to deteriorate the light emitting layercomprising the organic material such as moisture or oxygen can beprevented from penetrating from outside. Therefore, the highly reliablelight emitting apparatus can be provided.

This embodiment can freely be combined with Embodiment Modes 1 to 3, andEmbodiments 1, 2.

Embodiment 4

By implementing the present invention, all of electronic apparatusintegrated with a module having an OLED (active matrix type EL module)are completed.

As such electronic apparatus, a video camera, a digital camera, a headmount display (goggle type display), a car navigation apparatus, aprojector a car stereo, a personal computer, a portable informationterminal (mobile computer, portable telephone or electronic book) andthe like are pointed out. FIGS. 10A to 11C show examples of these.

FIG. 10A is a personal computer which includes a main body 2001, animage input portion 2002, a display unit 2003 and a keyboard 2004.

FIG. 10B is a video camera which includes a main body 2101, a displayunit 2102, a voice input portion 2103, an operation switch 2104, abattery 2105, an image receiving portion 2106.

FIG. 10C is a mobile computer which includes a main body 2201, a cameraportion 2202, an image receiving portion 2203, an operation switch 2204and a display unit 2205.

FIG. 10D is a goggle type display which includes a main body 2301, adisplay unit 2302 and an arm portion 2303.

FIG. 10E is a player using a record medium recorded with programs(hereinafter, referred to as record medium) which includes a main body2401, a display unit 2402, a speaker portion 2403, a record medium 2404and an operation switch 2405. Further, the player uses DVD (DigitalVersatile Disc) or CD as a record medium and can enjoy music, enjoymovie and carry out the game or Internet.

FIG. 10F is a digital camera which includes a main body 2501, a displayunit 2502, an eye-piece portion 2503, an operation switch 2504 and animage receiving portion (not illustrated).

FIG. 11A is a portable telephone which includes a main body 2901, avoice output portion 2902, a voice input portion 2903, a display unit2904, an operation switch 2905, an antenna 2906 and an image inputportion (CCD, image sensor) 2907.

FIG. 11B is a portable book (electronic book) which includes a main body3001, display units 3002, 3003, a record medium 3004, an operationswitch 3005, an antenna 3006.

FIG. 11C is the display which includes a main body 3101, a support base3102 and a display unit 3103.

Incidentally, the display shown in FIG. 11C is of a screen size ofmiddle or small type or large type, for example, a screen size of 5 to20 inches. Further, in order to form the display unit of this size, itis preferable to use a display unit having a side of a substrate of 1 mand carry out mass production by taking many faces. In case that thescreen having a size of middle or small type or large type is formed, itis preferable that the auxiliary electrode shown in Embodiment 2 orEmbodiment 3 is formed.

As described above, a range of applying the invention is extremely wideand is applicable to a method of fabricating electronic apparatus of allthe fields. Further, the electronic apparatus of the embodiment can berealized by using a constitution comprising any combination ofEmbodiment Modes 1 to 3 and Embodiments 1 to 3.

According to the present invention, a portion of light emitted from alight emitting layer comprising an organic material that is emitted inthe lateral direction (the direction parallel to the substrate face) isreflected by a slant formed in a stepped portion of a second electrodeto thereby increase the total amount of light taken out in a certaindirection (a direction in which light passes the third electrode). Inshort, a light emitting device with less stray light and other types oflight emission loss can be obtained.

What is claimed is:
 1. (canceled)
 2. A light emitting device comprising:a transistor supported by a first substrate; a conductive layerelectrically connected to an external input terminal; a first insulatinglayer over the transistor; a light emitting element comprising: a firstelectrode over the first insulating layer, wherein the first electrodeis electrically connected to one of a source electrode and a drainelectrode of the transistor; a light emitting layer over the firstelectrode; and a second electrode over the light emitting layer; asecond insulating layer over the first electrode and the conductivelayer; a second substrate over the first substrate so that the lightemitting layer is located between the first substrate and the secondsubstrate; and a sealing material formed between the first substrate andthe second substrate in a region along peripheries of the firstsubstrate and the second substrate, wherein the first electrode includesa first layer and a second layer over the first layer, wherein an edgeof the first layer extends beyond an edge of the second layer, whereinthe second insulating layer includes a slant face, wherein the secondlayer includes a slant face, wherein the second layer contains aluminum,wherein the second layer is configured to reflect a light emitted fromthe light emitting layer, and wherein the second electrode contains Mgand Ag.
 3. The light emitting device according to claim 2, wherein thesecond insulating layer has in its upper end portion a curved surfacepossessing a radius of curvature, and the radius of curvature is 0.2 μmto 3 μm.
 4. The light emitting device according to claim 2, wherein thesecond insulating layer has in its upper end portion a curved surfacepossessing a first radius of curvature and has in its lower end portiona curved surface possessing a second radius of curvature, and the firstradius of curvature and the second radius of curvature are 0.2 μm to 3μm.
 5. The light emitting device according to claim 2, wherein the lightemitting layer comprises one of a material emitting a red light, amaterial emitting a green light and a material emitting a blue light. 6.The light emitting device according to claim 2, wherein the lightemitting layer comprises a material emitting a white light, and iscombined with a color filter.
 7. The light emitting device according toclaim 2, wherein the light emitting layer is a material emitting amonochromatic light, and is combined with a color changing layer.
 8. Thelight emitting device according to claim 2, wherein the light emittingdevice is one selected from the group consisting of a video camera, adigital camera, a goggle type display, a car navigation, a personalcomputer, a DVD player, an electronic game equipment and a portableinformation terminal.
 9. A light emitting device comprising: atransistor supported by a first substrate; a conductive layerelectrically connected to an external input terminal; a first insulatinglayer over the transistor; a light emitting element comprising: a firstelectrode over the first insulating layer, wherein the first electrodeis electrically connected to one of a source electrode and a drainelectrode of the transistor, and wherein the first electrode is ananode; a light emitting layer over the anode; and a second electrodeover the light emitting layer; a second insulating layer over the firstelectrode and the conductive layer; a second substrate over the firstsubstrate so that the light emitting layer is located between the firstsubstrate and the second substrate; and a sealing material formedbetween the first substrate and the second substrate in a region alongperipheries of the first substrate and the second substrate, wherein thefirst electrode includes a first layer and a second layer over the firstlayer, wherein an edge of the first layer extends beyond an edge of thesecond layer, wherein the second insulating layer includes a slant face,wherein the second layer includes a slant face, wherein the second layercontains aluminum, wherein the second layer is configured to reflect alight emitted from the light emitting layer, and wherein the secondelectrode contains Mg and Ag.
 10. The light emitting device according toclaim 9, wherein the second insulating layer has in its upper endportion a curved surface possessing a radius of curvature, and theradius of curvature is 0.2 μm to 3 μm.
 11. The light emitting deviceaccording to claim 9, wherein the second insulating layer has in itsupper end portion a curved surface possessing a first radius ofcurvature and has in its lower end portion a curved surface possessing asecond radius of curvature, and the first radius of curvature and thesecond radius of curvature are 0.2 μm to 3 μm.
 12. The light emittingdevice according to claim 9, wherein the light emitting layer comprisesone of a material emitting a red light, a material emitting a greenlight and a material emitting a blue light.
 13. The light emittingdevice according to claim 9, wherein the light emitting layer comprisesa material emitting a white light, and is combined with a color filter.14. The light emitting device according to claim 9, wherein the lightemitting layer is a material emitting a monochromatic light, and iscombined with a color changing layer.
 15. The light emitting deviceaccording to claim 9, wherein the anode includes a slant face, and itsslant angle is 30° to 70°.
 16. The light emitting device according toclaim 9, wherein the light emitting device is one selected from thegroup consisting of a video camera, a digital camera, a goggle typedisplay, a car navigation, a personal computer, a DVD player, anelectronic game equipment and a portable information terminal.
 17. Alight emitting device comprising: a transistor supported by a firstsubstrate; a first conductive layer electrically connected to anexternal input terminal; a first insulating layer over the transistor; alight emitting element comprising: a first electrode over the firstinsulating layer, wherein the first electrode is electrically connectedto one of a source electrode and a drain electrode of the transistor; alight emitting layer over the first electrode; and a second electrodeover the light emitting layer, wherein the second electrode is a secondconductive layer through which a light is transmitted; a secondinsulating layer over the first electrode and the first conductivelayer; a second substrate over the first substrate so that the lightemitting layer is located between the first substrate and the secondsubstrate; and a sealing material formed between the first substrate andthe second substrate in a region along peripheries of the firstsubstrate and the second substrate, wherein the first electrode includesa first layer and a second layer over the first layer, wherein an edgeof the first layer extends beyond an edge of the second layer, whereinthe second insulating layer includes a slant face, wherein the secondlayer includes a slant face, wherein the second layer contains aluminum,wherein the second layer is configured to reflect a light emitted fromthe light emitting layer, and wherein the second electrode contains Mgand Ag.
 18. The light emitting device according to claim 17, wherein thesecond insulating layer has in its upper end portion a curved surfacepossessing a radius of curvature, and the radius of curvature is 0.2 μmto 3 μm.
 19. The light emitting device according to claim 17, whereinthe second insulating layer has in its upper end portion a curvedsurface possessing a first radius of curvature and has in its lower endportion a curved surface possessing a second radius of curvature, andthe first radius of curvature and the second radius of curvature are 0.2μm to 3 μm.
 20. The light emitting device according to claim 17, whereinthe light emitting layer comprises one of a material emitting a redlight, a material emitting a green light and a material emitting a bluelight.
 21. The light emitting device according to claim 17, wherein thelight emitting layer comprises a material emitting a white light, and iscombined with a color filter.
 22. The light emitting device according toclaim 17, wherein the light emitting layer is a material emitting amonochromatic light, and is combined with a color changing layer. 23.The light emitting device according to claim 17, wherein the lightemitting device is one selected from the group consisting of a videocamera, a digital camera, a goggle type display, a car navigation, apersonal computer, a DVD player, an electronic game equipment and aportable information terminal.
 24. The light emitting device accordingto claim 2, wherein the second insulating layer includes an openingwhere the sealing material is in direct contact with the conductivelayer, the opening being overlapped with the second substrate.
 25. Thelight emitting device according to claim 9, wherein the secondinsulating layer includes an opening where the sealing material is indirect contact with the conductive layer, the opening being overlappedwith the second substrate.
 26. The light emitting device according toclaim 17, wherein the second insulating layer includes an opening wherethe sealing material is in direct contact with the first conductivelayer, the opening being overlapped with the second substrate.